Semiconductor device having multiport memory

ABSTRACT

A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed in a matrix shape, each word line is disposed in the order of WLA0, WLB0, WLB1, WLA1, WLA2. Further, a pitch d2 between WLA-WLA and between WLB-WLB is made smaller than a pitch d1 between WLA-WLB. As such, the word lines of an identical port are disposed at the pitch d2 on one of both sides of a certain word line and the word lines of different ports are disposed at the pitch d1 on the other.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/795,502, filed Oct. 27, 2017, which is a continuation of U.S. patentapplication Ser. No. 15/583,093, filed May 1, 2017, now U.S. Pat. No.9,830,975, which is a continuation of U.S. patent application Ser. No.15/190,263, filed Jun. 23, 2016, now U.S. Pat. No. 9,672,872, which is acontinuation of U.S. patent application Ser. No. 14/490,235, filed Sep.18, 2014, now U.S. Pat. No. 9,378,773, which is a continuation of U.S.patent application Ser. No. 13/900,127, filed May 22, 2013, now U.S.Pat. No. 8,867,253, which is a continuation of U.S. patent applicationSer. No. 13/455,541, filed Apr. 25, 2012, now U.S. Pat. No. 8,467,214,which is a continuation of U.S. patent application Ser. No. 13/080,991,filed Apr. 6, 2011, now U.S. Pat. No. 8,189,358, which is a continuationof U.S. patent application Ser. No. 12/144,051, filed Jun. 23, 2008, nowU.S. Pat. No. 7,940,542, which claims priority to Japanese PatentApplication No. 2007-226451, filed Aug. 31, 2007, the content of whichis incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device, and moreparticularly to a technique which is useful when applied to asemiconductor device such as a multiport SRAM (Static Random AccessMemory).

As an example, in Japanese Unexamined Patent Publication No. 2004-335535(hereafter referred to as Patent Document 1), there is described amultiport memory of SRAM configuration having a layout such that a wordline corresponding to a first port and a word line corresponding to asecond port are disposed alternately. According to the aboveconfiguration, noise can be reduced without increasing a memory cellarea because it is possible to avoid such a situation that couplingnoise is simultaneously induced to a word line from the word linesdisposed on both sides of the word line concerned.

Also, in Japanese Unexamined Patent Publication No. 2004-86970(hereafter referred to as Patent Document 2), in regard to a bit line Afor port A and a bit line B for port B coupled to a dual port DRAM cell,there is described a dual port DRAM configured to have timing to amplifythe bit line A different from timing to amplify the bit line B.According to the above configuration, it is possible to preventcrosstalk noise between adjacent bit lines, even when the bit line A andthe bit line B are disposed alternately in an open bit structure.Additionally, in regard to word lines, there is shown a configurationhaving a word line for port A alternately disposed with a word line forport B.

Further, according to Japanese Unexamined Patent Publication No.2002-197866 (hereafter referred to as Patent Document 3), in athree-port RAM having two pairs of bit lines and a readout line fordisplay being coupled to an SRAM memory cell, there is shown aconfiguration in which the readout line for display is disposed betweeneither one pair out of the two pairs of bit lines. With the aboveconfiguration, it is possible to cancel noise in the readout line fordisplay because complementary coupling noise is induced from the bitlines on both sides of the above readout line. Additionally, in regardto word lines, there is shown a configuration in which a word line for afirst port, a word line for a second port and a word line for displayreadout are repetitively disposed in that order.

FIG. 20 shows a circuit diagram of an exemplary configuration of amultiport memory having been studied as a premise of the presentinvention. The multiport memory shown in FIG. 20 has a configuration asdescribed in Patent Document 1 and Patent Document 2, in which a wordline WLA for port A and a word line WLB for port B are disposedalternately at a pitch d4 which is kept equal between WLA and WLB. Usingsuch the configuration, as described in Patent Document 1, whenattention is directed to a word line WLB2 as an example, the word linesWLA1, WLA2 disposed on both sides of WLB2 do not simultaneously rise,and therefore it is possible to reduce coupling noise induced on WLB2.

However, from a different point of view, the exemplary configurationshown in FIG. 20 is configured to have a word line WLA (or WLB) for portA (or port B) sandwiched by word lines WLB (or WLA) for port B (or portA), and therefore, there is a possible problem caused by interferencebetween different ports. FIG. 21 shows an explanatory diagramillustrating one example of operation waveforms between different portsand in an identical port. FIG. 22 shows an explanatory diagramillustrating one example of a trouble due to interference between ports.

In the multiport memory, normally, different ports are operatedasynchronously. Therefore, as shown in FIG. 21, mutually neighboringword lines for a first port (port A) and for a second port (port B) asan example may be activated or deactivated at arbitrary timing in anidentical cycle. If the above situation occurs, as shown in FIG. 22 forexample, when the activation timing of the word line for the first portand the deactivation timing of the word line for the second portcoincides, a delay may possibly be produced in the rise time (or falltime) of the waveform because of mutually affecting interference. On theother hand, as shown in FIG. 21, such the problem does not occur becausemutually neighboring word lines of an identical port (the first porthere) are not activated or deactivated simultaneously. Although the wordline is taken as an example in the above description, the similarproblem accompanying asynchronous operation may occur in regard tomutually neighboring bit lines for different ports, and in regard toother signal lines also.

Further, as described in Patent Document 1 etc., when there are mutuallyneighboring word lines for an identical port, it is necessary toconsider about an influence of coupling noise given from one word lineto the other, needless to say. However, in principle, the signals (wordlines, bit lines and signal lines) for an identical port are neveractivated or deactivated simultaneously in an identical cycle, asillustrated in FIG. 21. Therefore, in the practical design, it ispossible to sufficiently predict the degree of influence thereof, and itis possible to easily secure a necessary noise margin by the design. Onthe other hand, in regard to signals for different ports, activation anddeactivation are made mutually asynchronously and at arbitrary timing(in other words, there are infinite number of combinations in the phaserelation between the first port signals and the second port signals inthe example shown in FIG. 21), and therefore, it is difficult tosufficiently predict the degree of mutual interference. Accordingly, inthe case of signals for different ports, it is desirable to secure arelatively larger noise margin, as compared with the case of signals foran identical port.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above circumstances,and has an object to provide a semiconductor device enabling extensionof a noise margin. The above and further objects and novel features ofthe present invention will become more apparent from the description inthe present specification and the accompanying drawings.

The semiconductor device according to one embodiment of the presentinvention includes a first word line for a first port and a second wordline for a second port respectively included in each row; a first bitline for the first port and a second bit line for the second portrespectively included in each row; and a plurality of memory cellsdisposed at the intersection between each row and each column. Further,in the above configuration, the first word line of a certain row isdisposed adjacent to the first word line of a neighboring row thereof ata second pitch, and the second word line of a certain row is disposedadjacent to the second word line of a neighboring row thereof at thesecond pitch, and as a feature, a pitch between the first word line andthe second word line in each row is larger than the second pitch.

With this, it is possible to reduce interference between differentports, and to achieve an expanded noise margin. Also, as compared withan exemplary case of alternate disposition of a first word line and asecond word line, the expansion of the noise margin can be intended witha small area. In addition, further expansion of the noise margin can beobtained by inserting a shield line between the first word line and thesecond word line. In this case, the problem of an area increase does notoccur because no shield line is necessary between the word lines of anidentical port (between neighboring first word lines and betweenneighboring second word lines).

Further, the semiconductor device according to one embodiment of thepresent invention includes a first selector circuit and a secondselector circuit disposed in the vicinity of one side of a rectangulararea having the plurality of memory cells disposed therein. The aboveplurality (defined as N) of columns is divided into K (=N/M) by the unitof M, and correspondingly thereto, K first selector circuits and Ksecond selector circuits are disposed. Each of the K first selectorcircuits has a function of selecting one from among M first bit linesincluded in M columns, and each of the K second selector circuits has afunction of selecting one from among M second bit lines included in theM columns. A J-th first selector circuit, which is one of the K firstselector circuits, is disposed adjacent to a J-th second selectorcircuit which is one of the K second selector circuits.

With such the configuration, a first wiring line for wiring M first bitlines included in certain M columns to a J-th first selector circuitcomes to intersect with a second wiring line for wiring M second bitlines included in the above M columns to a J-th second selector circuitat least at a portion of the wiring line. Therefore, a shield line isprovided so as to extend in the direction orthogonal to the bit lineextension direction (i.e. the word line extension direction) in theabove intersection portion, and the first wiring lines accompanying theaforementioned intersection are disposed side by side on one side of theabove shield line, and the second wiring lines accompanying theaforementioned intersection are disposed side by side on the other sideof the above shield line. Further, the first wiring lines and the secondwiring lines accompanying the intersection are drawn via the wiringlines disposed side by side on both sides of the shield line.

With this, in the intersection portion between the first wiring line andthe second wiring line, it becomes possible to reduce interferencebetween the first wiring line and the second wiring line, that is,interference between different ports, possibly caused by mutualapproximation, enabling an expanded noise margin. Additionally, such theintersection of wiring lines as described above does not occur when suchthe configuration is used that the first selector circuit is disposed onone side of a rectangular area, having a plurality of memory cellsdisposed therein, and the second selector circuit is disposed on theopposite side thereto. However, in the above configuration, there isproduced a side effect of an increased circuit area, as compared withthe configuration having both the first selector circuit and the secondselector circuit disposed on one side, as described earlier.

Further, the semiconductor device according to one embodiment of thepresent invention includes a shield line between a first control signalfor controlling the above-mentioned first selector circuit and a secondcontrol signal for controlling the second selector circuit.Specifically, the first control signal, the second control signal andthe shield line extend in a direction that the first selector circuitand the second selector circuit are disposed in order (that is, anextension direction of the word lines), and further, the first controlsignal is disposed in juxtaposition on one side across the shield lineand the second control signal is disposed in juxtaposition on the otherside. With this, the interference between the first control signal andthe second control signal, namely, the interference between differentports can be reduced, and the expansion of the noise margin can beattained.

Using the semiconductor device according to one embodiment of thepresent invention, it is possible to reduce the interference betweendifferent ports, to expand the noise margin, and to obtain the noisemargin expansion with a small area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram illustrating one exemplary configuration ofa semiconductor device according to an embodiment 1 of the presentinvention;

FIG. 2 shows a circuit diagram illustrating an exemplary configurationof a memory cell in the semiconductor device shown in FIG. 1;

FIG. 3 shows a circuit diagram illustrating an exemplary partialconfiguration of a plurality of memory cells in the semiconductor deviceshown in FIG. 1;

FIG. 4 shows a plan view illustrating an exemplary layout configurationin which only word lines are extracted in the exemplary circuit shown inFIG. 3;

FIG. 5 shows a plan view illustrating an exemplary layout configurationincluding memory cells on the second row and the third row shown in FIG.3;

FIGS. 6(a) and 6(b) show diagrams related to FIG. 5, where FIG. 6(a) isa plan view illustrating an exemplary layout configuration of a furtherupper layer than FIG. 5, and FIG. 6(b) is an equivalent circuit diagramof a layout image in the case that FIG. 5 is combined with FIG. 6(a);

FIG. 7 shows a plan view illustrating an exemplary configuration of asemiconductor device deformed from the layout shown in FIG. 4, accordingto an embodiment 2 of the present invention;

FIG. 8 shows a circuit diagram illustrating an exemplary configurationof a memory cell corresponding to the exemplary layout configurationshown in FIG. 7;

FIG. 9 shows a circuit diagram illustrating an exemplary configurationof another memory cell corresponding to the exemplary layoutconfiguration shown in FIG. 7;

FIG. 10 shows a circuit diagram illustrating an exemplary configurationof still another memory cell corresponding to the exemplary layoutconfiguration shown in FIG. 7;

FIG. 11 shows a circuit diagram illustrating an exemplary configurationof still another memory cell corresponding to the exemplary layoutconfiguration shown in FIG. 7;

FIGS. 12(a) and 12(b) show diagrams related to FIG. 5 in a semiconductordevice according to an embodiment 2 of the present invention, where FIG.12(a) is a plan view illustrating an exemplary layout configuration of afurther upper layer than FIG. 5, and FIG. 12(b) is an equivalent circuitdiagram of a layout image in the case that FIG. 5 is combined with FIG.12(a);

FIGS. 13(a) and 13(b) show an exemplary section configuration in thecase that FIG. 5 is combined with FIG. 12(a), where FIG. 13(a) is anA-A′ sectional view shown in FIG. 5 and FIG. 12(a) and FIG. 13(b) is aB-B′ sectional view shown in FIG. 5 and FIG. 12(a);

FIG. 14 shows a block diagram illustrating one exemplary configurationof a semiconductor device according to an embodiment 3 of the presentinvention;

FIG. 15 shows a circuit diagram illustrating a detailed exemplaryconfiguration of a principal part of an input/output circuit section inthe semiconductor device shown in FIG. 14;

FIG. 16 shows a plan view illustrating one example of a wiring layoutbetween a bit line and an input/output circuit sections in thesemiconductor device shown in FIG. 14;

FIG. 17 shows a sectional view illustrating an exemplary C-C′configuration shown in FIG. 16;

FIG. 18 shows a block diagram illustrating one exemplary configurationof a semiconductor device according to an embodiment 4 of the presentinvention;

FIG. 19 shows a plan view illustrating an exemplary layout configurationof the word lines of a single port memory in the semiconductor deviceshown in FIG. 18;

FIG. 20 shows a circuit diagram of an exemplary configuration of amultiport memory having been studied as a premise of the presentinvention;

FIG. 21 shows an explanatory diagram illustrating one example ofoperation waveforms between different ports and in an identical port;

FIG. 22 shows an explanatory diagram illustrating one example of atrouble due to interference between ports;

FIG. 23 shows a plan view illustrating an exemplary layout configurationof a word line when a shield wire is inserted between word lines in thesemiconductor device shown in FIG. 20; and

FIGS. 24(a) and 24(b) show exemplary section configurations in the casethat FIG. 5 is combined with FIG. 6(a), where FIG. 24(a) is an A-A′sectional view shown in FIG. 5 and FIG. 6(a), and FIG. 24(b) is a B-B′sectional view shown in FIG. 5 and FIG. 6(a).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereafter, preferred embodiments of the present invention will bedescribed in detail referring to the drawings. In all the drawingsillustrating the embodiments, in principle, like members are designatedby like reference numerals and symbols, and repeated descriptions ofsuch members are omitted. In the following embodiments, the descriptionsare made by dividing into a plurality of sections or embodiments in thecase of necessity for the sake of convenience. However, the abovedescriptions are not irrelevant to each other except for the cases ofbeing particularly specified, and one has relationship to a deformedexample, a detail or a complementary description of a portion or thewhole of the others. Further, in the following embodiments, when thenumber of elements and the like (including the number of pieces,numerical values, quantities and ranges) are mentioned, it is notlimited to the particular number thereof except for the cases eitherparticularly specified or obviously to be limited to the particularnumber in view of the principle. It is also applicable to the cases ofnot less than or not more than the particular number.

Further, in the following embodiments, constituent elements thereof(including element steps) are not always essential except for the caseseither particularly specified or obviously to be essential in principle,or the like, needless to say. Similarly, in the following embodiments,when the shape, the positional relation, etc. of the constituentelements are mentioned, virtual approximation and resemblance to theshape, etc. are to be included except for the cases either particularlyspecified or obviously to be otherwise in principle, or the like. Theabove description is also applied to the above numerical values andranges.

[Embodiment 1] FIG. 1 shows a block diagram illustrating one exemplaryconfiguration of a semiconductor device according to an embodiment 1 ofthe present invention. FIG. 2 shows a circuit diagram illustrating anexemplary configuration of a memory cell MC in the semiconductor deviceshown in FIG. 1. The semiconductor device shown in FIG. 1 includes aplurality of memory cells MC disposed in the row and column shape(matrix shape), a word driver WDA for a first port (port A), acontroller CTLA and an input/output circuit section IOC_A, and further,a word driver WDB for a second port (port B), a controller CTLB and aninput/output circuit section IOC_B.

As shown in FIG. 2, each memory cell MC is a so-called SRAM memory cell,which includes two driver transistors DR1 and DR2, two load transistorsLD1 and LD2, and four access transistors AC1 a, AC1 b, AC2 a and AC2 b.Here, the driver transistors DR1, DR2 and access transistors AC1 a, AC1b, AC2 a, AC2 b are configured of NMOS transistors, while loadtransistors LD1, LD2 are configured of PMOS transistors.

LD1 and DR1 configure a first CMOS (Complementary Metal OxideSemiconductor) inverter I1, and LD2 and DR2 configure a second CMOSinverter I2. One output terminal of each of the first and secondinverters I1, I2 is mutually coupled to the input terminal of the other.With this, I1 and I2 configure one-bit latch circuit, so as to retaincomplementary storage information in a storage node Nt and an invertedstorage node Nb. Each source of DR1, DR2 is coupled to a ground voltageGND, and each source of LD1, LD2 is coupled to a power supply voltageVDD.

The access transistor AC1 a couples the storage node Nt and a bit lineBLA for port A when a word line WLA for port A is activated, while AC2 acouples the inverted storage node Nb and an inverted bit line /BLA forport A when WLA is activated. Similarly, the access transistor AC1 bcouples the storage node Nt and a bit line BLB for port B when a wordline WLB for port B is activated, while AC2 b couples the invertedstorage node Nb and an inverted bit line /BLB for port B when WLB isactivated.

BLA and /BLA configure a bit line pair for port A, while BLB and /BLBconfigure a bit line pair for port B. The word lines WLA, WLB arerespectively disposed side by side in the row direction, while the bitlines BLA, /BLA, BLB, and /BLB are respectively disposed side by side inthe column direction. Further, one row is configured of a word linegroup including two word lines WLA, WLB, while one column is configuredof a bit line group including four bit lines BLA, /BLA, BLB, and /BLB.Each memory cell MC comes to be disposed at the intersection of each row(word line group) and each column (bit line group).

In FIG. 1, a word driver WDA drives a plurality of word linesrespectively disposed side by side in the row direction, while a worddriver WDB drives a plurality of word lines WLB respectively disposedside by side in the column direction. WDA and WDB are disposed mutuallyoppositely to sandwich the area of the memory cell MC. The input/outputcircuit section IOC_A reads and writes information targeting the bitline pair (BLA, /BLA) for port A, being coupled to the memory cell MC,while the input/output circuit section IOC_B reads and writesinformation targeting the bit line pair (BLB, /BLB) for port B, beingcoupled to the memory cell MC. Additionally, in FIG. 1, each bit linepair is omitted for convenience.

A controller CTLA controls a non-illustrated plurality of word drivercircuits included in WDA on receiving an externally input address signalfor port A, and also controls a non-illustrated plurality of readoutcircuits (sense amplifier circuits etc.), write circuits, etc. includedin IOC_A. Similarly, a controller CTLB controls a non-illustratedplurality of word driver circuits included in WDB on receiving anexternally input address signal for port B, and also controls anon-illustrated plurality of readout circuits, write circuits, etc.included in IOC_B.

In such the configuration, one of the principal features of thesemiconductor device according to the present embodiment 1 is that theplurality of word lines WLA, WLB are disposed with an alternatingarrangement of the word lines WLA, WLB on a row-by-row basis, like WLA0,WLB0, WLB1, WLA1, WLA2, . . . . In other words, it is configured that aword line WLA of a certain row is disposed adjacent to the rightneighboring (or left neighboring) row word line WLA, and a word line WLBof a certain row is disposed adjacent to the left neighboring (or rightneighboring) row word line WLB. Further, as another principal feature ofthe semiconductor device according to the present embodiment 1, inregard to mutually adjacent word lines, the disposition is made in sucha manner that a pitch dl between word lines for different ports(WLA-WLB) is made larger than a pitch d2 between word lines for anidentical port (WLA-WLA or WLB-WLB). Hereinafter, more detaileddescription is made including the above features.

FIG. 3 shows a circuit diagram illustrating an exemplary partialconfiguration of a plurality of memory cells MC in the semiconductordevice shown in FIG. 1. In FIG. 3, there are shown memory cells MC1 toMC3 for three rows disposed in order on an identical column (bit linesBLA, /BLA, BLB and /BLB). The word lines WLA1, WLB1 are coupled to MC1,the word lines WLA2, WLB2 are coupled to MC2, and the word lines WLA3,WLB3 are coupled to MC3. The disposition in the row direction of eachword line is in order of WLB1, WLA1, WLA2, WLB2, WLB3, and WLA3, asdescribed earlier. Further, for example, the pitch d1 between WLB1 andWLA1, which is to be the first row, is larger than the pitch d2 betweenWLA1 and WLA2 which is to be a gap between the first row and the secondrow.

For example, WLA1 interferes with WLB1 by a parasitic capacitor(coupling capacitor) CC1 and also interferes with WLA2 by a parasiticcapacitor CC2. Accompanying an asynchronous operation, there maypossibly be produced signal transition (activation or deactivation) inboth WLA1 and WLB1 within an identical cycle, as described in FIG. 21.On the other hand, no signal transition is produced in both WLA1 andWLA2 within an identical cycle. Therefore, the pitch d1 is designed tohave a sufficient noise margin in consideration of a layout arearequired for the memory cell MC1 and bidirectional interference betweenWLA1 and WLB1. In contrast, the pitch d2 can be designed to the minimumas compared with the pitch d1, because it is sufficient to considerone-directional coupling noise from one of WLA1 and WLA2 to the other.

Thus, using the semiconductor device according to the present embodiment1, it is possible to obtain a semiconductor device having a large noisemargin. In particular, since interference between ports can be reduced,the noise margin can be expanded. Also, it is possible to obtain asemiconductor device having a large noise margin with a small area.Specifically, for example, in case of the word line disposition as shownin FIG. 20 described earlier, to expand the noise margin, it isnecessary to widen the entire pitches between the word lines, whichcauses an increased circuit area. However, as compared therewith, usingthe word line disposition according to the present embodiment, it ispossible to intend an expanded noise margin with a small area.

FIG. 4 shows a plan view illustrating an exemplary layout configurationin which only the word line is extracted in the exemplary circuit shownin FIG. 3. When viewed as a layout, the exemplary circuit shown in FIG.3 is configured in such a manner that three one-bit cells are arrangedin the row direction, as shown in FIG. 4. In this case, the gap betweenthe word lines in a cell (WLA and WLB) becomes wide, while the gapbetween the word lines between cells (WLA-WLA or WLB-WLB) becomesnarrow.

FIG. 5 shows a plan view illustrating an exemplary layout configurationincluding memory cells MC2, MC3 on the second row and the third rowshown in FIG. 3. FIGS. 6(a) and 6(b) show diagrams related to FIG. 5,where FIG. 6(a) is a plan view illustrating an exemplary layoutconfiguration of a further upper layer than FIG. 5, and FIG. 6(b) is anequivalent circuit diagram of a layout image in the case that FIG. 5 iscombined with FIG. 6(a). FIG. 5 shows the exemplary layout configurationfrom a transistor-forming layer to a first metal wiring layer, whileFIG. 6(a) shows the exemplary layout configuration from a first via holeto a third metal wiring layer. First, the exemplary layout configurationof memory cell MC2 for one bit is described.

Referring to FIG. 5, on the surface of a semiconductor substrate, thereare formed one N-type well area NW and two P-type well areas PW0, PW1sandwiching the above N-type well area NW. In NW, load transistors LD1,LD2 which are PMOS transistors are formed. In PW0, there are formed adriver transistor DR1 and access transistors AC1 a, AC2 a, which areNMOS transistors, and also in PW1, there are formed a driver transistorDR2 and access transistors AC1 b, AC2 b which are NMOS transistors.

LD1 has a gate constituted of a polysilicon PO1, and a source and adrain formed on both sides of the gate, constituted of a P-typediffusion area DP1. The source is coupled to a first metal wiring layerM101 to which a supply voltage VDD is supplied via a contact C101. Thedrain is coupled to a first metal wiring layer M102 via a contact C102.LD2 has a gate constituted of a polysilicon PO2, and a source and adrain formed on both sides of the gate, constituted of a P-typediffusion area DP2. The source is coupled to a first metal wiring layerM103 to which the supply voltage VDD is supplied via a contact C103. Thedrain is coupled to a first metal wiring layer M104 via a contact C104.

DR1 has a gate also linked to the gate of LD1, constituted of thepolysilicon PO1, and a source and a drain formed on both sides of thegate, constituted of an N-type diffusion area DN1. The source is coupledto a first metal wiring layer M105 to which a ground voltage GND issupplied via two contacts C105 a, C105 b. The drain is coupled to thefirst metal wiring layer M102 which is also linked to the drain of LD1via a contact C106.

AC1 a has a gate constituted of a polysilicon PO3, and a source and adrain formed on both sides of the gate, constituted of an N-typediffusion area DN2. One of the source and the drain is coupled to thefirst metal wiring layer M102 also linked to the drains of LD1 and DR1via a contact C107. The other of the source and the drain is coupled toa first metal wiring layer M106 coupled to the bit line BLA via acontact C108. AC2 a has a gate also linked to the gate of AC1 a,constituted of a polysilicon PO3, and a source and a drain formed onboth sides of the gate, constituted of an N-type diffusion area DN3. Oneof the source and the drain is coupled to the first metal wiring layerM104 also linked to the drain of LD2 etc. via a contact C109. The otherof the source and the drain is coupled to a first metal wiring layerM107 coupled to the inverted bit line /BLA via a contact C110. Further,the polysilicon PO3 to be the gates of AC1 a, AC2 a is coupled to afirst metal wiring layer M108 coupled to the word line WLA via a contactC111.

Now, DR2 has a gate also linked to the gate of LD2, constituted of thepolysilicon PO2, and a source and a drain formed on both sides of thegate, constituted of an N-type diffusion area DN4. The source is coupledto the first metal wiring layer M109 to which the ground voltage GND issupplied via two contacts C112 a, C112 b. The drain is coupled to thefirst metal wiring layer M104 also linked to the drain of LD2 via acontact C113.

AC1 b has a gate constituted of a polysilicon PO4, and a source and adrain formed on both sides of the gate, constituted of an N-typediffusion area DN5. One of the source and the drain is coupled to thefirst metal wiring layer M102 also linked to the drains of LD1 and DR1via a contact C114. The other of the source and the drain is coupled toa first metal wiring layer M110 coupled to the bit line BLB via acontact C115. AC2 b has a gate also linked to the gate of AC1 b,constituted of a polysilicon PO4, and a source and a drain formed onboth sides of the gate, constituted of an N-type diffusion area DN6. Oneof the source and the drain is coupled to the first metal wiring layerM104 also linked to the drain of LD2 etc. via a contact C116. The otherof the source and the drain is coupled to a first metal wiring layerM111 coupled to the inverted bit line /BLB via a contact C117. Further,the polysilicon PO4 to be the gates of AC1 b, AC2 b is coupled to afirst metal wiring layer M112 coupled to the word line WLB via a contactC118.

Further, the polysilicon PO1 to be the gates of DR1 and LD1 is coupledto the first metal wiring layer M104 being conducted to the drain of LD2etc. via a contact C119, and the polysilicon PO2 to be the gates of DR2and LD2 is coupled to the first metal wiring layer M102 being conductedto the drain of LD1 etc. via a contact C120. Additionally, each ofP-type diffusion areas DP1, DP2 is formed by injecting P-type impuritiesinto the N-type well area NW using the corresponding polysilicon gate asa mask, and also, each of N-type diffusion areas DN1 to DN6 is formed byinjecting N-type impurities into the P-type well areas PW0, PW1 usingthe corresponding polysilicon gate as a mask.

Next, referring to FIG. 6(a), over the upper layer of FIG. 5, secondmetal wiring layers M21 a, M21 b are formed on the left and right sides,and second metal wiring layers M23 to M29 are formed being disposed sideby side in a line shape therebetween. M23 and M25 respectivelycorrespond to the bit line BLA and the inverted bit line /BLA, and theground voltage GND is supplied to M24 disposed therebetween. M27 and M29respectively correspond to the bit line BLB and the inverted bit line/BLB, and the ground voltage GND is supplied to M28 disposedtherebetween. Further, the supply voltage VDD is supplied to M26disposed between M25 and M27.

M21 a is coupled to the first metal wiring layer M108 shown in FIG. 5via a first via hole V101, and M21 b is coupled to the first metalwiring layer M112 shown in FIG. 5 via a first via hole V106. M23 iscoupled to the first metal wiring layer M106 shown in FIG. 5 via a firstvia hole V102, and M25 is coupled to the first metal wiring layer M107shown in FIG. 5 via a first via hole V103, and M24 is coupled to thefirst metal wiring layer M105 shown in FIG. 5 via a first via hole V107.M27 is coupled to the first metal wiring layer M110 shown in FIG. 5 viaa first via hole V109, and M29 is coupled to the first metal wiringlayer M111 shown in FIG. 5 via a first via hole V110, and M28 is coupledto the first metal wiring layer M109 shown in FIG. 5 via a first viahole V105. Further, M26 is coupled to the first metal wiring layer M103shown in FIG. 5 via a first via hole V104, and also coupled to the firstmetal wiring layer M101 shown in FIG. 5 via a first via hole V108.

As such, the second metal wiring layer is configured to be shieldedbetween the bit line BLA (or BLB) and the inverted bit line /BLA (or/BLB) by the wiring (GND line) of the ground voltage GND, and alsoshielded between the inverted bit line /BLA for port A and the bit lineBLB by the wiring (VDD line) of the supply voltage VDD. With this, itbecomes possible to reduce interference between the wirings. Inparticular, the provision of the VDD line enables reduction of theinterference between different ports.

Further, over the upper layer of the second metal wiring layer, thereare formed third metal wiring layers M31, M32 disposed side by side in aline shape. M31 corresponds to the word line WLA2, and M32 correspondsto the word line WLB2. M31 is coupled to the second metal wiring layerM21 a via a second via hole V21, and M32 is coupled to the second metalwiring layer M21 b via a second via hole V22.

Next, in regard to the memory cell MC3 adjacent to the memory cell MC2,there is provided a layout configuration with line symmetry along theboundary line between MC2 and MC3, as shown in FIG. 5. Accordingly, thediffusion area (DN1), the contacts (C105 a, C105 b) and the first metalwiring layer (M105) located at the above boundary portion, which are tobe the source of the driver transistor DR1 of MC2, are also commonlyused as the source of the driver transistor DR1 of MC3. Similarly, thesource of the load transistor LD1, and either the source or the drain ofeach access transistor AC1 b, AC2 b are also commonly used by MC2 andMC3. Additionally, though not shown in the figure, in regard to theboundary portion between MC2 and MC1 for example, the diffusion area,the contacts and the first metal wiring layer located at the aboveboundary portion are commonly used by MC2 and MC1.

Further, similarly in FIG. 6(a), MC2 and MC3 have layout configurationswith line symmetry along the boundary line thereof. In MC3, similar tothe case of MC2, a second metal wiring layer M22 a for coupling the wordline WLA and a second metal wiring layer M22 b for coupling the wordline WLB are disposed in line symmetry with M21 a and M21 b in MC2across the boundary line described above. Therefore, as can beunderstood from FIG. 6(a), the arrangement order of respective wordlines and the pitch between respective word lines can freely be adjustedby the position of each second via hole. Thus, the order of arrangementand the pitch relation (d1>d2) forming the aforementioned feature of thepresent embodiment 1 can be achieved easily.

Here, by laying out a second via hole V23 over M22 b in MC3 and V22 overM21 b in MC2 at a pitch d2, the pitch between the word line WLB3 (thirdmetal wiring layer M33) coupled to V23 and WLB2 coupled to V22 is set atd2. Also, by laying out the above V23 and V24 over M22 a at a pitch d1in the row direction thereof, the pitch between the word line WLB3coupled to V23 and WLA3 (third metal wiring layer M34) coupled to V24 isset at d1.

FIG. 24 shows an exemplary section configuration in the case that FIG. 5is combined with FIG. 6(a), where FIG. 6(a) is an A-A′ sectional viewshown in FIG. 5 and FIG. 6(a), and FIG. 6(b) is a B-B′ sectional viewshown in FIG. 5 and FIG. 6(a). In FIG. 24(a), a P-type well area PW isformed in the semiconductor substrate SUB, and the N-type diffusionareas DN4, DN5, which are to be either sources or drains of NMOStransistors, are formed in PW. Over the semiconductor substrate SUB,polysilicons PO2, PO4 which are to be the gates of MOS transistors areformed, and over the upper portion thereof, the first metal wiringlayers M109, M110, and M102 are formed. The first metal wiring layersM109, M110, and M102 are coupled to the N-type diffusion areas DN4, DN5via the corresponding contacts C112 a, C114 and C115.

Over the upper portion of the first metal wiring layer, the bit line BLBconstituted of a second metal wiring layer M2 is formed. BLB is coupledto the first metal wiring layer M110 via the first via hole V109. Overthe upper portion of the second metal wiring layer M2, there is formed athird metal wiring layer M3 extending in the direction orthogonal to BLB(the direction penetrating through the paper). The word line WLA and theword line WLB are formed in M3. Here, the pitch between WLA-WLB isformed larger than the pitches between WLA-WLA and between WLB-WLB,thereby enabling reduction of interference between different ports.

In FIG. 24(b), the P-type well areas PW0, PW1 and the N-type well areaNW are formed in the semiconductor substrate SUB, and polysilicons PO2,PO3, which are to be the gates of the MOS transistors, are formed onSUB. The N-type diffusion areas DN2, DN3 are formed in PW0, the P-typediffusion area DP2 is formed in NW, and the N-type diffusion area DN4 isformed in PW1. Additionally, the above diffusion areas are shown for thesake of convenience, and practically, the areas correspond to thechannel portions of a MOS transistor having the above diffusion areas onboth sides, as can be understood from FIG. 5.

Over the upper portion of the polysilicon, the second metal wiring layerM2 is formed. In M2, M21 a for coupling the word line WLA and M21 b forcoupling the word line WLB are formed on both sides, and further, thebit lines BLA, /BLA, BLB, /BLB, the GND lines and the VDD line areformed therebetween. The GND lines are disposed between BLA and /BLA andbetween BLB and /BLB, respectively, and also the VDD line is disposedbetween /BLA and BLB. The above GND lines and the VDD line can reduceinterference between the bit lines, and in particular, the VDD line canreduce interference between the bit lines for different ports. Further,there is formed over M2 the word line WLA2, which is to be the thirdmetal wiring layer M3, and this WLA2 is coupled to M21 a via the secondvia hole V21.

Thus, using the semiconductor device according to the present embodiment1, it becomes possible to obtain a semiconductor device having a largenoise margin between word lines and/or between bit lines. Further, thissemiconductor device having the large noise margin can be attained witha small area. In particular, between the word lines and/or between thebit lines, it becomes possible to expand a noise margin againstinterference between ports.

[Embodiment 2] FIG. 7 shows a plan view illustrating an exemplaryconfiguration of a semiconductor device deformed from the layout shownin FIG. 4, according to an embodiment of the present invention. As shownin FIG. 7, the semiconductor device according to the present embodiment2 has a principal feature of further providing a shield line SLD, whichextends in juxtaposition with the word line between the word lines ofdifferent ports (between WLA and WLB), in addition to the word linelayout similar to FIG. 4.

With the provision of such the shield line SLD, it becomes possible tofurther expand a noise margin between the word lines of different ports.Also, if the layout area of each memory cell can be restrained, itbecomes possible to further decrease the pitch d1 between WLA and WLB ascompared with the pitch dl in case of FIG. 4 due to a shield effect, andthus, it becomes possible to expand the noise margin with a smaller areathan the case of embodiment 1.

Also, since the order of arrangement of the word lines is made to be theorder of arrangement as described in the embodiment 1, the number ofshield lines can be reduced, and the noise margin can be expanded with asmall area. Namely, by applying the shield line to the aforementionedexemplary configuration shown in FIG. 20 for example, the circuit areabecomes increased as compared with the case shown in FIG. 7, because itis necessary to insert shield lines to the entire gaps between the wordlines as shown in FIG. 23.

FIGS. 8 to 11 show circuit diagrams illustrating exemplaryconfigurations of a memory cell corresponding to the exemplary layoutconfiguration shown in FIG. 7, respectively showing examples ofdifferent shield line types. The exemplary circuits shown in FIGS. 8 to11 are similar to the exemplary circuit shown in FIG. 3 except for theshield lines, and therefore the description on the overlapped portion isomitted.

FIG. 8 shows an exemplary circuit when a VDD line is used as the shieldline SLD shown in FIG. 7. This VDD line is coupled to a supply voltageVDD of inverters I1, I2 included in each of memory cells MC1 to MC3.FIG. 9 shows an exemplary circuit when a GND line is used as the shieldline SLD shown in FIG. 7. This GND line is coupled to a ground voltageGND of the inverters I1, I2 included in of the memory cells MC1 to MC3.

FIG. 10 shows an exemplary circuit when a wiring to be a floating FL isused as the shield line SLD shown in FIG. 7. The wiring to be thefloating FL has a sufficiently large parasitic capacitance, andtherefore a shield effect can be expected to a certain extent. FIG. 11is an exemplary circuit when a signal line SL is used as the shield lineSLD shown in FIG. 7. To this signal line SL, there is applied a signalline which always becomes static during the transition process of theword lines WLA, WLB.

FIGS. 12(a) and 12(b) show diagrams related to FIG. 5 in thesemiconductor device according to the embodiment 2 of the presentinvention, where FIG. 12(a) is a plan view illustrating an exemplarylayout configuration of a further upper layer than FIG. 5, and FIG.12(b) is an equivalent circuit diagram of a layout image in the casethat FIG. 5 is combined with FIG. 12(a). FIGS. 12(a) and 12(b) are anexemplary layout configuration when the GND line is applied as theshield line SLD, as described in FIG. 9. The exemplary layoutconfiguration shown in FIG. 12(a) illustrates a layout from the firstvia hole to the third metal wiring layer, and the layout from the firstvia hole to the second metal wiring layer is similar to the FIG. 6(a)described earlier. Therefore, the description will be given only on thedifference from FIG. 6(a).

In the exemplary layout configuration shown in FIG. 12(a), there areadded, to the exemplarily layout configuration shown in FIG. 6(a), thirdmetal wiring layers M35, M36 and accompanying second via holes V25 a,V26 a, V25 b and V26 b. M35 is disposed between the word line WLA2(third metal wiring layer M31) of the memory cell MC2 and the word lineWLB2 (third metal wiring layer M32). M35 is also coupled to the secondmetal wiring layer M24 disposed side by side with the bit lines, via V25a, and to the second metal wiring layer M28 disposed side by side withthe bit lines, via V26 a. As described earlier, M24 and M28 are GNDlines, and M35 becomes the GND line also.

Similarly, M36 is disposed between the word line WLB3 (third metalwiring layer M33) and the word line WLA3 (third metal wiring layer M34)of the memory cell MC3. Further, M36 is coupled to the above-mentionedsecond metal wiring layer M24 via V25 b, and also coupled to theabove-mentioned second metal wiring layer M28 via V26 b. Accordingly,M36 becomes the GND line also. Here, let d2 be the pitch between theword lines of an identical port mutually adjacent in the third metalwiring layer (between WLB2 and WLB3, for example), and let d5 be thepitch between mutually adjacent WLA and GND and between WLB and GND,then it is possible to satisfy d2>d5, for example. Here, in the abovecase also, because of the circuit area of the memory cell MC, inreality, the pitch d1 between WLA and WLB becomes d1(=2×d5)>d2, and aresult becomes d2>d5>(d2/2).

FIGS. 13(a) and 13(b) show diagrams of an exemplary sectionconfiguration in the case that FIG. 5 is combined with FIG. 12(a), whereFIG. 13(a) is an A-A′ sectional view shown in FIG. 5 and FIG. 12(a) andFIG. 13(b) is a B-B′ sectional view shown in FIG. 5 and FIG. 12(a). Ascompared with the sectional view shown in FIG. 24(a) described in theembodiment 1, the sectional view shown in FIG. 13(a) illustrates theconfiguration in which the third metal wiring layer M3 includes the GNDline formed between the word lines WLA and WLB. Due to the shield effectaccompanying the above GND line, interference between WLA and WLB isreduced. Here, as to other configurations, detailed description isomitted because of the similarity to FIG. 24(a). Also, as to thesectional view shown in FIG. 13(b), the detailed description is omittedbecause of the similarity to the aforementioned FIG. 24(b).

Thus, using the semiconductor device according to the present embodiment2, because a shield between the word lines for different ports is addedto the semiconductor device of the embodiment 1, it becomes possible toattain a semiconductor device having a large noise margin between theword lines and/or between the bit lines. Further, in some cases, it ispossible to attain a semiconductor device having a large noise marginwith a smaller area than the semiconductor device according to theembodiment 1.

[Embodiment 3] FIG. 14 shows a block diagram illustrating one exemplaryconfiguration of a semiconductor device according to an embodiment 3 ofthe present invention. As compared with the semiconductor device shownin FIG. 1, the principal features of the semiconductor device shown inFIG. 14 lie in: (1) the disposition of input/output circuit sectionsIOC_A, IOC_B; (2) the wiring layout from the bit line to the IOC_A,IOC_B; and (3) the disposition of each control line when the controllersCTLA, CTLB control the IOC_A, IOC_B. In the following, descriptions onthe portions overlapped with FIG. 1 are omitted.

In FIG. 14, the controller CTLA of a first port (port A) includes alatch section ADD_LT for latching an address signal for the first portbeing input externally, a decoder DEC for decoding the above addresssignal, and a Y selection buffer section YSEL_BF for outputting a Yselection signal etc. corresponding to a Y address for the first port.Similarly, the controller CTLB of a second port (port B) includes alatch section ADD_LT for latching an address signal for the second portbeing input externally, a decoder DEC for decoding the above addresssignal, and a Y selection buffer section YSEL_BF for outputting a Yselection signal etc. corresponding to a Y address for the second port.DEC decodes one portion of the input address signal as X address, andthe other portion as Y address, respectively. The result of the decodedX address is used to control the word drivers WDA, WDB, while the resultof the decoded Y address is used to control the input/output circuitsections IOC_A, IOC_B via YSEL_BF.

Input/output circuit sections IOC_A1 to IOC_Am for the first portrespectively include Y selectors YSEL_A1 to YSEL_Am for the first port,sense amplifier circuits SA, output buffer circuits OBF, write drivercircuits WTD, and input buffer circuits IBF. Similarly, input/outputcircuit sections IOC_B1 to IOC_Bm for the second port respectivelyinclude Y selectors YSEL_B1 to YSEL_Bm for the second port, senseamplifier circuits SA, output buffer circuits OBF, write driver circuitsWTD, and input buffer circuits IBF.

FIG. 15 shows a circuit diagram illustrating a detailed exemplaryconfiguration of a principal part of each input/output circuit sectionin the semiconductor device shown in FIG. 14. Although the input/outputcircuit section IOC_A1 is shown in FIG. 15 as a representative example,the other input/output circuit sections IOC_A2 to IOC_Am andinput/output circuit sections IOC_B1 to IOC_Bm have similar circuitconfigurations. As shown in FIG. 15, the input/output circuit sectionIOC_A1 has a circuit configuration of selecting one pair out of four bitline pairs (BLA[0], /BLA[0]) to (BLA[3], /BLA[3]) based on Y selectionsignals YS_A[0] to YS_A[3], so as to couple to the sense amplifiercircuit SA and the write driver circuit WTD.

For example, when the Y selection signal YS_A[0] is in ‘H’ level andYS_A[1] to YS_A[3] are in ‘L’ level, BLA[0] and /BLA[0] are coupled toSA and WTD via a PMOS switch PSW0 and an NMOS switch NSW0. Similarly,when the YS_A[3] is in ‘H’ level and YS_A[0] to YS_A[2] are in ‘L’level, BLA[3] and /BLA[3] are coupled to SA and WTD via a PMOS switchPSW3 and an NMOS switch NSW3. At the time of readout, a complementarysignal of the above coupled bit line pair is amplified in SA, which isthen output via the non-illustrated output buffer circuit OBF. At thetime of writing, a complementary input signal being input via the inputbuffer circuit IBF (not shown) and the write driver circuit WTD iswritten into the above coupled bit line pair. Additionally, activationand deactivation of SA and WTD are controlled by an enable signal EN_Awhich is input at desired timing.

Similar to the above input/output circuit section IOC_A1, for example,the input/output circuit section IOC_B1 has a configuration of selectingone pair out of four bit line pairs (BLB[0], /BLB[0]) to (BLB[3],/BLB[3]) based on Y selection signals YS_B[0] to YS_B[3], so as tocouple to the sense amplifier circuit SA and the write driver circuitWTD. The above SA and WTD in IOC_B1 are controlled by an enable signalEN_B. Also, for example, the input/output circuit section IOC_A2 has aconfiguration of selecting one pair out of four bit line pairs (BLA[4],/BLA[4]) to (BLA[7], /BLA[7]) based on the Y selection signals YS_A[0]to YS_A[3], so as to couple to the sense amplifier circuit SA and thewrite driver circuit WTD.

Such the Y selection signals YS_A[0] to YS_A[3] for the first port andthe enable signal EN_A correspond to a first port control line YCA whichis output from YSEL_BF of the controller CTLA of the first port shown inFIG. 14. Similarly, the Y selection signals YS_B[0] to YS_B[3] for thesecond port and the enable signal EN_B correspond to a second portcontrol line YCB which is output from YSEL_BF of the controller CTLB ofthe second port shown in FIG. 14. Also, the PMOS switches PSW0 to PSW3and the NMOS switches NSW0 to NSW3 included in the input/output circuitsection IOC_A1 shown in FIG. 15 correspond to the Y selector YSEL_A1 ofthe first port shown in FIG. 14.

Although the above each input/output circuit section IOC is configuredto select one pair out of the four bit line pairs, it is possible tosuitably modify according to the number of simultaneous input/outputsignals (so-called IO structure). For example, in FIG. 14, when thenumber of columns is 256 (n=255), when the configuration of selectingone column out of four bit line pairs (four columns) is used, the numberof simultaneous input/output signals (IO) for each port becomes 64(=n/4). Accordingly, the value m in the input/output circuit sectionsIOC_A1 to IOC_Am and the input/output circuit sections IOC_B1 to IOC_Bmbecomes 64. For example, when the above number of simultaneousinput/output signals (IO) is to be 32, the value m may become 32, usingthe configuration of selecting one pair out of eight bit line pairs.

Here, in FIG. 14, an area in which the memory cell MC is disposed in amatrix shape is referred to as a memory cell disposition area MCA. MCAin the multiport memory normally has an oblong shape (rectangular shape)longer in the X direction (extension direction of the word lines) thanin the Y direction (extension direction of the bit lines). A firstfeature point in the exemplary configuration shown in FIG. 14 lies inthat, on one long side of such MCA, the input/output circuit sectionIOC_Ak (where k is any one of 0 to m) for the first port and theinput/output circuit section IOC_Bk for the second port are disposedadjacently in the X direction. Namely, in the X direction, each isdisposed in the order of arrangement of IOC_A1, IOC_B1, IOC_A2, IOC_B2,. . . , or IOC_A1, IOC_B1, IOC_B2, IOC_A2, . . . , or the like.

Here, in the above case, for example, the bit lines BLA[0 ] to BLA[3],/BLA[0] to /BLA[3] coupled to IOC_A1 inevitably come to intersect withthe bit lines BLB[0 ] to BLB[3], /BLB[0 ] to /BLB[3] coupled to IOC_B1in at least a portion, as shown in FIG. 14. Then, in the aboveintersecting area ARA, the bit lines for the first port become close tothe bit lines for the second port, by which a risk of the occurrence ofinterference therebetween arises. In order to cope therewith, as asecond feature, this intersecting area is made to have a wiring layoutas shown in FIGS. 16 and 17.

FIG. 16 shows a plan view illustrating one example of a wiring layoutbetween the bit lines and the input/output circuit sections in thesemiconductor device shown in FIG. 14. FIG. 17 shows a sectional viewillustrating an exemplary configuration between C-C′ shown in FIG. 16.The exemplary layout configuration shown in FIG. 16 corresponds to thearea portion ARA shown in FIG. 14. Here, in FIG. 14, the order ofarrangement of the bit lines in each memory cell MC is shown by theorder of BLA, BLB, /BLA, and /BLB for the sake of convenience. However,in the case that the exemplary layout configuration as shown in FIG. 6is applied, the arrangement of the bit lines becomes in the order ofBLA, /BLA, BLB, and /BLB. In FIG. 16, based on an assumed case ofapplying to the memory cell MC the exemplary layout configuration asshown in FIG. 6, there is shown the wiring layout of the portion of thearea ARA in such the case, which is different to a certain extent fromthe wiring route shown in the area ARA of FIG. 14.

In FIG. 16, in the upper portion thereof, the bit lines are disposed inthe order of BLA[0], /BLA[0], BLB[0], /BLB[0], BLB[1], /BLB[1], BLA[1],/BLA[1], . . . BLA[3], and /BLA[3]. Namely, bit lines (/BLB[0] andBLB[1], for example) disposed on both sides across the boundary linebetween mutually adjacent columns become bit lines belonging to anidentical port. With this, it becomes possible to reduce interferencebetween different ports, as compared with the case of disposing in sucha manner that the bit lines on the both sides across the boundary linebecome the bit lines belonging to different ports. On the other hand, inthe lower portion of FIG. 16, bit lines to be input to IOC_A1 aredisposed in the order of BLA[0], /BLA[0], BLA[2], /BLA[2], BLA[3],/BLA[3], BLA[1] and /BLA[1], and in the neighbor thereof, bit lines tobe input to IOC_B1 are respectively disposed in the similar order.

Accordingly, in order to couple the upper portion of FIG. 16 to thelower portion, it is necessary to draw BLA[2], /BLA[2], BLA[3] and/BLA[3], which are positioned on the right side of the upper portion, tothe left side of the lower portion by use of wiring extending in the Xdirection, and also to draw BLB[0], /BLB[0], BLB[1] and /BLB[1]positioned on the left side of the upper portion to the right side ofthe lower portion, by use of wiring extending in the X direction. Whendrawing the wiring in the X direction, for example, a wiring layout asshown in FIG. 17 is used. Namely, with the provision of the GND line (orVDD line) extending in the X direction, the bit lines (BLA[2], /BLA[2],BLA[3], /BLA[3]) corresponding to the first port are disposed on one ofboth sides sandwiching the GND line (or VDD line), and also the bitlines (BLB[0], /BLB[0], BLB[1], /BLB[1]) corresponding to the secondport are disposed on the other.

With this, as can be understood from the description on each embodimentso far, it is possible to attain an expanded noise margin becauseinterference between different ports can be reduced as compared with thecase of alternately disposing BLA and BLB, for example, in the wiring ofthe X direction. Further, the expanded noise margin can be attained witha small area.

Further, for example in FIG. 14, the expansion of the noise margin canalso be attained when the input/output circuit sections IOC_A1 to IOC_Amfor the first port are disposed on one long side of MCA and also theinput/output circuit sections IOC_B1 to IOC_Bm for the second port aredisposed on the other side, because such the bit line intersection areaas described earlier becomes unnecessary. However, in this case, itbecomes necessary in the actual layout that the size of the entireinput/output circuit sections IOC_A1 to IOC_Am in the X direction andthe size of the entire input/output circuit sections IOC_B1 to IOC_Bm inthe X direction are made substantially equal to the size of MCA in the Xdirection. This produces an extra space in the layout, and causesanxiety of inefficiency or increase of the circuit area. As comparedtherewith, as shown in FIG. 14, it is possible to attain efficiency ofthe circuit area by disposing both the input/output circuit sections forthe first port and the input/output circuit sections for the second porton one long side of MCA.

Subsequently, a third feature point in the exemplary configuration shownin FIG. 14 is that the aforementioned first port control line YCA isdisposed on one of both sides sandwiching the shield line SLD, such asthe GND line or the VDD line, and that the second port control line YCBis disposed on the other side. Namely, on the both ends of the pluralityof input/output circuit sections IOC_A1 to IOC_Am and the input/outputcircuit sections IOC_B1 to IOC_Bm being disposed in the X direction, thecontroller CTLA of the first port is disposed adjacent to one endportion thereof, and the controller CTLB of the second port is disposedadjacent to the other end portion. Further, the first port control lineYCA extends in the X direction from CTLA, crossing over the plurality ofinput/output circuit sections, and also the second port control line YCBextends in the X direction from CTLB, crossing over the plurality ofinput/output circuit sections. The shield line SLD extending in the Xdirection is disposed between the above YCA and YCB.

Since interference between different ports can be reduced by theabove-mentioned dispositions of the first port control line YCA, thesecond port control line YCB and the shield line SLD, it is possible toattain an expanded noise margin. Also, the expansion of the noise margincan be attained with a small area.

Additionally, the first to the third feature points described in thepresent embodiment 3 are useful as a method for expanding a noise marginor expanding the noise margin with a small area when being usedindividually, needless to say. Moreover, it becomes more useful whenbeing used in combination thereof. Also, needless to say, a furtherdesirable effect may be obtained when being combined with the exemplaryconfigurations as described in the embodiment 1 and the embodiment 2.

Further, in regard to the features of the second and the third points,the expansion of the noise margin has been attained by inserting theshield lines SLD between the bit lines (BLA-BLB) of different ports andbetween the control lines (YCA-YCB) of different ports, respectively,and however, it is also possible to expand the noise margin based on therelationship of magnitude of the pitches, similar to the case of theembodiment 1. Namely, in FIG. 17, it becomes possible to expand thenoise margin without any shield line SLD if, for example, the pitchbetween BLA[3] and BLB[1], which belong to different ports, is madelarger than the pitch between BLA[2] and /BLA[3] which belong to anidentical port. Also, in FIG. 14, it becomes possible to expand thenoise margin without any shield line SLD if the pitch between the firstport control line YCA and the second port control line YCB is madelarger than the pitch between each wiring included in the first portcontrol line YCA.

[Embodiment 4] FIG. 18 shows a block diagram illustrating one exemplaryconfiguration of a semiconductor device according to an embodiment 4 ofthe present invention. The semiconductor device shown in FIG. 18 isformed of one semiconductor chip CP. Inside thereof, there are formedCPU (Central Processing Unit), single port memory SMEM, multiport memoryMMEM, and cache controller CCN for controlling SMEM and MMEM by a CPUinstruction, etc. The above multiport memory MMEM has the exemplaryconfiguration as described in the embodiments 1 to 3.

On the other hand, the single port memory SMEM has a generally knownSRAM configuration. Namely, SMEM includes a plurality of word linesjuxtaposed with one another at an equal pitch, a plurality of bit linesjuxtaposed with one another and extending in a direction orthogonal tothe extension direction of the above plurality of word lines, and aplurality of memory cells disposed at the respective intersectionsbetween the above plurality of word lines and the plurality of bitlines.

FIG. 19 shows a plan view illustrating an exemplary layout configurationof the word lines of a single port memory in the semiconductor deviceshown in FIG. 18. As shown in FIG. 19, for example, the single portmemory SMEM has a configuration such that a plurality of word lines WL1,WL2, . . . is disposed side by side, with the disposition of the GNDline etc. between the respective word lines. The pitch between therespective word lines WL and the GND line on the both sides thereof hasa value d3 which is equal over the entire single port memory. Also, thepitch between each of the plurality of word lines has a value (2×d2)which is equal over the entire single port memory. Namely, the pluralityof wirings arranged in the row direction is arranged at equal intervals,respectively. On the other hand, in the multiport memory MMEM, as shownin FIG. 7 etc. for example, there may be cases that the plurality ofwirings arranged in the row direction is not arranged at equalintervals. Further, in regard to the pitch between the respective wordlines, the pitch dl related to mutually different ports becomes largerthan the pitch d2 related to a mutually identical port.

For the semiconductor device as shown in FIG. 18, miniaturization andhigh-speed operation are strongly required. In particular, in amultiport memory MMEM for use in a cache memory, there are cases thathigh-speed and complicated memory access is executed from CCN to aplurality of ports. Then, it becomes more and more important to secure anoise margin. In such cases, applying the exemplary configurationaccording to the present embodiments can sufficiently contribute tominiaturization and high-speed operation.

The invention made by the present inventor has been described typicallybased on the embodiments. However, the present invention is not limitedto the aforementioned embodiments, and a variety of modifications arepossible without deviating from the scope thereof.

For example, the multiport memory including the SRAM memory cell hasbeen exemplified here, and however, it is also possible to apply to amultiport memory including a DRAM memory cell. It may also be possibleto appropriately combine a portion or the entire of each embodiment.

The semiconductor device according to the present invention is a usefultechnique particularly when applied to a semiconductor device includinga multiport memory constituted of an SRAM memory cell, and further, notlimited thereto, the semiconductor device is widely applicable togeneral semiconductor devices including the multiport memory.

What is claimed is:
 1. A semiconductor device comprising: first andsecond static memory cells, first, second, third and fourth word lines,and first and second bit lines, wherein each of the first and secondstatic memory cells includes a first inverter and a second inverter, afirst access transistor and a second access transistor coupled to thefirst inverter, and a third access transistor and a fourth accesstransistor coupled to the second inverter, wherein the first inverterhas a first driver transistor and a first load transistor, and thesecond inverter has a second driver transistor and a second loadtransistor, wherein the first word line is electrically coupled to thefirst and third access transistors of the first static memory cell, thesecond word line is electrically coupled to the second and fourth accesstransistors of the first static memory cell, the third word line iselectrically coupled to the second and fourth access transistors of thesecond static memory cell, and the fourth word line is electricallycoupled to the first and third access transistors of the second staticmemory cell, wherein the first bit line is electrically coupled to thefirst access transistor of each of the first and second static memorycells, and the second bit line is electrically coupled to the secondaccess transistor of each of the first and second static memory cells,wherein the first and third access transistors and the first drivertransistor of each of the first and second static memory cells aredisposed in a first well of a first conductive type, wherein the firstand the second load transistors of the first and second static memorycells are disposed in a second well of a second conductive type, whereinthe second and fourth access transistors and the second drivertransistor of each of the first and second static memory cells aredisposed in a third well of the first conductive type, wherein thefirst, second and third wells are arranged in a first direction suchthat the second well is arranged between the first well and the thirdwell, wherein the first and second static memory cells are arrangedadjacently to each other, wherein the first and second bit lines extendalong a first direction, wherein the first, second, third and fourthword lines extend along a second direction perpendicular to the firstdirection and are arranged over the first and second bit lines, whereinthe second word line and the third word line are arranged between thefirst word line and the fourth word line such that the second word lineand the third word line are arranged adjacently, and wherein a firstdistance between the first word line and the second word line is longerthan a second distance between the second word line and third word line.2. The semiconductor device according to claim 1, further comprisingfirst and second port word driver circuits, wherein the first word lineand the fourth word line are connected to the first port word drivercircuit, and the second word line and the third word line are connectedto the second port word driver circuit.
 3. The semiconductor deviceaccording to claim 2, the first port word driver circuit is arrangedopposite to the second port word driver circuit via a memory arrayincluding the first and second static memory cells.
 4. The semiconductordevice according to claim 3, wherein a third distance between the thirdword line and the fourth word line is longer than the second distancebetween the second word line and third word line.
 5. The semiconductordevice according to claim 4, wherein the first and second drivertransistors of the first and second static memory cells are coupled witha first power voltage wiring, wherein the first and second loadtransistors of the first and second static memory cells are coupled witha second power voltage wiring, and wherein the first and second powervoltage wirings arranged in a same layer as the first and second bitlines.
 6. The semiconductor device according to claim 3, wherein each ofthe first, second, third and fourth access transistors and the first andthe second load transistors of the first memory cell is formed on aplurality of a substantively rectangular active regions being long inthe first direction, respectively.
 7. The semiconductor device accordingto claim 2, wherein the first static memory cell is arranged between thefirst word line and the second word line, and wherein the second staticmemory cell is arranged between the third word line and the fourth wordline.
 8. The semiconductor device according to claim 7, wherein each ofthe first, second, third and fourth access transistors and the first andthe second load transistors of the second memory cell is formed on aplurality of a substantively rectangular active regions being long inthe first direction, respectively.